KSD1616AGBU - Fairchild Semiconductor

Manufacturer Part Number

KSD1616AGBU

Manufacturer

Fairchild (onsemi)

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT), Single

Product Features and Performance

TO-92-3 and TO-226-3 package options

Operating temperature up to 150°C

Power rating of 750 mW

Collector-Emitter Breakdown Voltage up to 60V

Collector Current (Ic) up to 1A

Collector Cutoff Current (ICBO) up to 100nA

Low Collector-Emitter Saturation Voltage (VCE(sat)) of 300mV @ 50mA, 1A

DC Current Gain (hFE) of at least 200 @ 100mA, 2V

Transition Frequency (fT) of 160MHz

Product Advantages

Reliable and robust performance

Compact through-hole package options

Wide operating temperature range

Suitable for high-current applications

Key Technical Parameters

Manufacturer Part Number: KSD1616AGBU

Package: TO-92-3, TO-226-3

Operating Temperature: 150°C (TJ)

Power Rating: 750 mW

Collector-Emitter Breakdown Voltage: 60V

Collector Current (Ic): 1A

Collector Cutoff Current (ICBO): 100nA

Collector-Emitter Saturation Voltage (VCE(sat)): 300mV @ 50mA, 1A

DC Current Gain (hFE): 200 @ 100mA, 2V

Transition Frequency (fT): 160MHz

Quality and Safety Features

Robust and reliable design

Complies with relevant safety standards

Compatibility

Widely compatible with various electronic circuits and applications

Application Areas

Amplifiers

Switches

Power management circuits

General-purpose electronics

Product Lifecycle

Currently available

No information on discontinuation or replacement

Key Reasons to Choose This Product

Excellent performance characteristics

Wide operating temperature range

Reliable and robust design

Suitable for high-current and high-power applications

Available in through-hole package options