Manufacturer Part Number
KSD1616AGBU
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Single Bipolar Junction Transistor (BJT)
Product Features and Performance
High Power Handling Capability: 750mW
High Voltage Withstanding: 60V Collector-Emitter Breakdown Voltage
High Current Capability: 1A Collector Current
High Current Gain: Minimum 200 hFE
High Frequency Operation: 160MHz Transition Frequency
Product Advantages
Robust design for reliable performance
Versatile application in power amplifiers, switches, and other circuits
Suitable for high voltage and high current operations
Key Technical Parameters
Package: TO-92-3, TO-226-3
Operating Temperature: Up to 150°C
Collector-Emitter Breakdown Voltage: 60V
Collector Current (Max): 1A
DC Current Gain (hFE): Minimum 200
Quality and Safety Features
RoHS3 Compliant
Reliable performance under high temperature and high power conditions
Compatibility
Through-hole mounting
Compatible with various electronic circuits and applications
Application Areas
Power amplifiers
Switches
Voltage regulators
General-purpose electronics
Product Lifecycle
Currently available
No information on discontinuation or replacements
Several Key Reasons to Choose This Product
High power handling and voltage withstanding capability
Excellent current gain and high frequency performance
Robust design for reliable operation in harsh environments
Versatile and suitable for a wide range of electronic applications
RoHS3 compliance for environmental safety