Manufacturer Part Number
KSC945YTA
Manufacturer
Fairchild (onsemi)
Introduction
Discrete Semiconductor Products
Transistors - Bipolar (BJT) - Single
Product Features and Performance
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Operating Temperature: 150°C (TJ)
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Transistor Type: NPN
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 300MHz
Mounting Type: Through Hole
Product Advantages
High power capacity
Wide operating voltage range
High current handling capability
Low collector-emitter saturation voltage
Strong current gain
High-frequency performance
Key Technical Parameters
Power Rating: 250 mW
Collector-Emitter Breakdown Voltage: 50 V
Collector Current (Max): 150 mA
Collector Cutoff Current: 100nA
Current Gain: Minimum 120 @ 1 mA, 6 V
Transition Frequency: 300 MHz
Quality and Safety Features
Robust TO-92-3 package construction
Reliable performance under high temperature conditions
Compatibility
Suitable for a variety of electronic circuit applications
Application Areas
Amplifiers
Switches
Drivers
Logic circuits
General-purpose transistor applications
Product Lifecycle
Currently in production
Replacement or upgrade options may be available
Key Reasons to Choose This Product
High power capacity and wide voltage range
Efficient current handling and low saturation voltage
Strong current gain for amplification and switching
High-frequency performance for fast-switching applications
Reliable operation in high-temperature environments
Compatibility with various electronic circuit designs