KSC945CGTA - onsemi

Manufacturer Part Number

KSC945CGTA

Manufacturer

onsemi

Introduction

The KSC945CGTA is a general-purpose NPN bipolar junction transistor (BJT) suitable for a wide range of amplifier and switching applications.

Product Features and Performance

High current gain (hFE) of at least 200 at 1mA and 6V

High transition frequency of 300MHz

Low collector-emitter saturation voltage (VCEsat) of 300mV at 10mA and 100mA

Low collector cutoff current (ICBO) of max 100nA

Power handling capability of up to 250mW

Wide collector-emitter breakdown voltage (VCEO) of 50V

Wide operating temperature range up to 150°C

Product Advantages

Excellent amplification and switching capabilities

Suitable for high-frequency applications

Good thermal and electrical stability

Compact and versatile TO-92 package

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 50V

Collector Current (IC): 150mA

Collector Cutoff Current (ICBO): 100nA

DC Current Gain (hFE): 200 (min)

Transition Frequency (fT): 300MHz

Power Dissipation: 250mW

Operating Temperature: -55°C to 150°C

Quality and Safety Features

RoHS3 compliant

Reliable construction and manufacturing process

Compatibility

TO-92-3 package footprint

Suitable for through-hole mounting

Application Areas

General-purpose amplifier and switching applications

Audio and radio frequency (RF) circuits

Power supplies and control systems

Industrial and consumer electronics

Product Lifecycle

Currently in production

Replacement or upgrade options may be available in the future

Several Key Reasons to Choose This Product

Excellent high-frequency performance

Wide voltage and current capabilities

Robust and reliable construction

RoHS compliance for environmentally-conscious designs

Widely used and proven in a variety of applications