KSC1008YTA - Fairchild Semiconductor

Manufacturer Part Number

KSC1008YTA

Manufacturer

Fairchild (onsemi)

Introduction

Discrete Semiconductor Products

Transistors - Bipolar (BJT) - Single

Product Features and Performance

TO-92-3 package

150°C maximum junction temperature

800 mW maximum power

60 V maximum collector-emitter breakdown voltage

700 mA maximum collector current

100 nA maximum collector cutoff current

400 mV maximum collector-emitter saturation voltage at 50 mA, 500 mA collector current

NPN transistor type

120 minimum DC current gain at 50 mA, 2 V collector-emitter voltage

50 MHz transition frequency

Product Advantages

Reliable performance in high-temperature applications

Capable of handling high power and current

Suitable for a wide range of electronic circuit designs

Key Technical Parameters

Package: TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Supplier Device Package: TO-92-3

Package: Bulk

Operating Temperature: 150°C (TJ)

Power Max: 800 mW

Voltage Collector Emitter Breakdown (Max): 60 V

Current Collector (Ic) (Max): 700 mA

Current Collector Cutoff (Max): 100 nA (ICBO)

Vce Saturation (Max) @ Ib, Ic: 400 mV @ 50 mA, 500 mA

Transistor Type: NPN

DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50 mA, 2 V

Frequency Transition: 50 MHz

Mounting Type: Through Hole

Quality and Safety Features

Reliable performance in high-temperature environments

Robust design for long-term use

Compatibility

Suitable for a wide range of electronic circuit designs

Application Areas

Suitable for various electronic applications requiring high-power, high-current transistors

Product Lifecycle

Currently available

No information on discontinuation or replacement

Several Key Reasons to Choose This Product

Reliable performance in high-temperature applications

Capable of handling high power and current

Suitable for a wide range of electronic circuit designs

Robust design for long-term use

Compatibility with various electronic applications