KSC1008YTA - onsemi

Manufacturer Part Number

KSC1008YTA

Manufacturer

onsemi

Introduction

General purpose NPN bipolar transistor

Product Features and Performance

High current capability up to 700 mA

Wide breakdown voltage up to 60 V

High current gain of 120 min at 50 mA, 2 V

High transition frequency of 50 MHz

Low collector-emitter saturation voltage of 400 mV at 50 mA, 500 mA

Operating temperature up to 150°C

Product Advantages

Suitable for a wide range of general-purpose amplifier and switching applications

Excellent electrical performance in a compact TO-92-3 package

RoHS3 compliant for environmentally-friendly use

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 60 V

Collector Current (IC): 700 mA

Collector Cutoff Current (ICBO): 100 nA

DC Current Gain (hFE): 120 min at 50 mA, 2 V

Transition Frequency (fT): 50 MHz

Power Dissipation: 800 mW

Quality and Safety Features

RoHS3 compliant

Reliable and durable performance

Compatibility

Compatible with a wide range of electronic circuits and systems

Application Areas

General-purpose amplifier and switching applications

Automotive electronics

Industrial control systems

Consumer electronics

Product Lifecycle

Currently in active production

Replacements and upgrades available

Several Key Reasons to Choose This Product

Excellent electrical performance in a compact package

Wide operating temperature range up to 150°C

High current capability and breakdown voltage

RoHS3 compliant for environmentally-friendly use

Reliable and durable performance

Compatibility with a wide range of electronic applications