KSB1151YSTU - Fairchild Semiconductor

Manufacturer Part Number

KSB1151YSTU

Manufacturer

Fairchild (onsemi)

Introduction

A high-performance PNP bipolar junction transistor (BJT) suitable for a variety of power applications.

Product Features and Performance

Capable of handling up to 1.3W of power dissipation

Breakdown voltage of up to 60V between collector and emitter

Maximum collector current of 5A

Collector cutoff current up to 10A

Low saturation voltage of 300mV @ 200mA, 2A

DC current gain (hFE) of at least 160 @ 2A, 1V

Operates at temperatures up to 150°C

Product Advantages

Robust and reliable performance

Suitable for high-power applications

Compact TO-126-3 package

Key Technical Parameters

Power Dissipation: 1.3W

Collector-Emitter Breakdown Voltage: 60V

Collector Current (Max): 5A

Collector Cutoff Current: 10A

Vce Saturation Voltage: 300mV @ 200mA, 2A

DC Current Gain (hFE): 160 @ 2A, 1V

Operating Temperature: 150°C

Quality and Safety Features

Rigorous quality control and testing

Compliance with industry safety standards

Compatibility

Through-hole mounting

Compatible with a variety of power electronics applications

Application Areas

Power amplifiers

Power supplies

Motor controls

Switching circuits

Product Lifecycle

This product is currently available and in production

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

Reliable and robust performance

Capable of handling high power loads

Compact and efficient design

Wide operating temperature range

Suitable for a variety of power electronics applications