Manufacturer Part Number
KSB1151YSTU
Manufacturer
Fairchild (onsemi)
Introduction
A high-performance PNP bipolar junction transistor (BJT) suitable for a variety of power applications.
Product Features and Performance
Capable of handling up to 1.3W of power dissipation
Breakdown voltage of up to 60V between collector and emitter
Maximum collector current of 5A
Collector cutoff current up to 10A
Low saturation voltage of 300mV @ 200mA, 2A
DC current gain (hFE) of at least 160 @ 2A, 1V
Operates at temperatures up to 150°C
Product Advantages
Robust and reliable performance
Suitable for high-power applications
Compact TO-126-3 package
Key Technical Parameters
Power Dissipation: 1.3W
Collector-Emitter Breakdown Voltage: 60V
Collector Current (Max): 5A
Collector Cutoff Current: 10A
Vce Saturation Voltage: 300mV @ 200mA, 2A
DC Current Gain (hFE): 160 @ 2A, 1V
Operating Temperature: 150°C
Quality and Safety Features
Rigorous quality control and testing
Compliance with industry safety standards
Compatibility
Through-hole mounting
Compatible with a variety of power electronics applications
Application Areas
Power amplifiers
Power supplies
Motor controls
Switching circuits
Product Lifecycle
This product is currently available and in production
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Reliable and robust performance
Capable of handling high power loads
Compact and efficient design
Wide operating temperature range
Suitable for a variety of power electronics applications
KSB1151-YFairchild (onsemi)