Manufacturer Part Number
KSB1151YSTU
Manufacturer
onsemi
Introduction
High-power, high-voltage PNP bipolar junction transistor (BJT)
Suitable for a variety of power supply and switching applications
Product Features and Performance
High collector-emitter breakdown voltage of 60V
High collector current rating of 5A
Low collector-emitter saturation voltage of 300mV @ 2A
Wide operating temperature range up to 150°C
Product Advantages
Excellent power handling capability
Robust and reliable performance
Compact TO-126-3 package
Key Technical Parameters
Power rating: 1.3W
Collector-emitter breakdown voltage: 60V
Collector current: 5A
Collector cutoff current: 10A
Current gain (hFE): 160 @ 2A, 1V
Quality and Safety Features
RoHS3 compliant
Meets industry quality and reliability standards
Compatibility
Compatible with various power supply and switching circuit designs
Application Areas
Power supplies
Motor controls
Lighting systems
Industrial electronics
Product Lifecycle
Current production model, no plans for discontinuation
Replacement or upgraded models available if needed
Key Reasons to Choose This Product
High power handling capability
Robust and reliable performance
Compact and efficient package design
Meets industry quality and safety standards
Compatibility with a wide range of applications