Manufacturer Part Number
FQU8P10TU
Manufacturer
Fairchild (onsemi)
Introduction
This product is a P-Channel MOSFET transistor belonging to the QFET series.
Product Features and Performance
Operating Temperature: -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±30V
Rds On (Max) @ Id, Vgs: 530mOhm @ 3.3A, 10V
Current Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Product Advantages
High voltage and current handling capability
Low on-resistance for efficient performance
Wide operating temperature range
Suitable for various power management and control applications
Key Technical Parameters
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drive Voltage (Max Rds On, Min Rds On): 10V
Mounting Type: Through Hole
Quality and Safety Features
Suitable for industrial and commercial applications
Robust design for reliable operation
Compatibility
Compatible with a wide range of electronic systems and circuits
Application Areas
Power management and control circuits
Motor control
Switching applications
Industrial and commercial electronics
Product Lifecycle
This product is currently available and not nearing discontinuation
Replacements and upgrades may be available from the manufacturer
Key Reasons to Choose This Product
High voltage and current handling capability for demanding applications
Low on-resistance for efficient power management
Wide operating temperature range for versatile use
Robust design and reliable performance
Compatibility with various electronic systems and circuits
FQU8P10TU MOSFairchild (onsemi)