Manufacturer Part Number
FQU8P10TU
Manufacturer
onsemi
Introduction
Single P-channel MOSFET transistor
Product Features and Performance
Wide operating temperature range of -55°C to 150°C
High drain-to-source voltage of 100V
Low on-resistance (RDS(on)) of 530 mΩ
High continuous drain current of 6.6A
Low input capacitance of 470 pF
Maximum power dissipation of 2.5W (Ta) and 44W (Tc)
Product Advantages
Excellent thermal performance
Robust and reliable operation
Suitable for a wide range of power management and switching applications
Key Technical Parameters
Drain-to-Source Voltage (VDS): 100V
Gate-to-Source Voltage (VGS): ±30V
On-Resistance (RDS(on)): 530 mΩ
Continuous Drain Current (ID): 6.6A
Input Capacitance (Ciss): 470 pF
Power Dissipation (PD): 2.5W (Ta), 44W (Tc)
Quality and Safety Features
RoHS3 compliant
Robust I-PAK package for reliable operation
Compatibility
Compatible with a wide range of power management and switching applications
Application Areas
Power management circuits
Switching applications
Motor control
Industrial and automotive electronics
Product Lifecycle
Currently available
No information on discontinuation or replacements
Key Reasons to Choose This Product
Excellent thermal performance and reliability
Wide operating temperature range
High drain-to-source voltage and continuous drain current
Low on-resistance and input capacitance
Robust and versatile I-PAK package
FQU7N10LFairchild (onsemi)