Manufacturer Part Number
FQU3N50CTU
Manufacturer
Fairchild (onsemi)
Introduction
High-voltage N-channel MOSFET transistor designed for high-efficiency power conversion applications.
Product Features and Performance
500V drain-source voltage rating
5A continuous drain current at 25°C
5 ohm maximum on-resistance at 1.25A, 10V
365pF maximum input capacitance at 25V
35W maximum power dissipation at 25°C
Product Advantages
Efficient power conversion
High voltage and current handling
Low on-resistance for low power losses
Compact TO-251 package
Key Technical Parameters
Drain-Source Voltage (Vdss): 500V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 2.5 ohm max
Drain Current (Id): 2.5A continuous at 25°C
Input Capacitance (Ciss): 365pF max at 25V
Power Dissipation (Pd): 35W max at 25°C
Quality and Safety Features
Rated for -55°C to 150°C operating temperature range
MOSFET technology for reliable performance
I-PAK package for secure mounting
Compatibility
Suitable for various high-voltage power conversion applications
Application Areas
Switching power supplies
Motor drives
Industrial controls
Lighting ballasts
Product Lifecycle
Currently in active production
Replacements and upgrades available from onsemi
Key Reasons to Choose
High voltage and current capability
Low on-resistance for efficient power conversion
Compact and robust I-PAK package
Proven MOSFET technology for reliable performance
Wide operating temperature range