Manufacturer Part Number
FQU3N50CTU
Manufacturer
onsemi
Introduction
High-voltage, low on-resistance N-channel enhancement-mode power MOSFET
Product Features and Performance
Optimized for high-voltage, high-efficiency power conversion applications
Low on-resistance for low conduction losses
High voltage capability up to 500 V
Low gate charge for high-frequency switching
Fast switching speed
Rugged design with high avalanche energy rating
Product Advantages
Efficient power conversion with low power losses
Reliable and robust performance
Suitable for high-voltage, high-frequency power applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 500 V
Gate-Source Voltage (Vgs): ±30 V
On-Resistance (RDS(on)): 2.5 Ω @ 1.25 A, 10 V
Continuous Drain Current (ID): 2.5 A @ 25°C
Input Capacitance (Ciss): 365 pF @ 25 V
Power Dissipation (PD): 35 W @ 25°C
Quality and Safety Features
RoHS3 compliant
Reliable performance within -55°C to 150°C operating temperature range
Compatibility
Suitable for a wide range of high-voltage, high-frequency power conversion applications
Application Areas
Switching power supplies
Motor drives
DC-DC converters
Inverters
Industrial and consumer electronics
Product Lifecycle
Current product, no plans for discontinuation
Replacement or upgrade options available if needed
Key Reasons to Choose This Product
Efficient power conversion with low conduction losses
High voltage capability and fast switching speed
Rugged design with high avalanche energy rating
Reliable performance across wide temperature range
Suitable for a variety of high-voltage, high-frequency power applications
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