Manufacturer Part Number
FQU11P06TU
Manufacturer
Fairchild (onsemi)
Introduction
The FQU11P06TU is a high-performance P-channel MOSFET transistor from Fairchild (onsemi), suitable for a wide range of power management and switching applications.
Product Features and Performance
60V drain-to-source voltage rating
185mΩ maximum on-resistance at 4.7A, 10V
4A continuous drain current at 25°C
550pF maximum input capacitance at 25V
5W power dissipation at 25°C, 38W at case temperature
Operating temperature range of -55°C to 150°C
Product Advantages
Low on-resistance for improved efficiency
High drain current capability
Compact TO-251-3 (I-PAK) package
Suitable for a wide range of power applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 60V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 185mΩ @ 4.7A, 10V
Drain Current (Id): 9.4A @ 25°C
Input Capacitance (Ciss): 550pF @ 25V
Power Dissipation: 2.5W @ 25°C, 38W @ case temperature
Quality and Safety Features
MOSFET technology for reliable performance
Suitable for industrial and automotive applications
Compliant with relevant safety and quality standards
Compatibility
Compatible with a wide range of power supply and control circuits
Application Areas
Power management
Motor control
Switching power supplies
Industrial and automotive electronics
Product Lifecycle
This product is currently in production and available for purchase.
Replacement or upgrade options may be available from the manufacturer as technology evolves.
Key Reasons to Choose This Product
Excellent performance characteristics, including low on-resistance and high current capability
Compact and efficient package design
Wide operating temperature range for versatile applications
Proven reliability and quality from a reputable manufacturer
