Manufacturer Part Number
FQU10N20CTU
Manufacturer
onsemi
Introduction
High-performance N-Channel MOSFET
Product Features and Performance
Wide operating temperature range of -55°C to 150°C
High drain-to-source voltage of 200V
Low on-resistance of 360mΩ at 3.9A, 10V
High continuous drain current of 7.8A at 25°C
Low input capacitance of 510pF at 25V
Power dissipation of up to 50W
Product Advantages
Excellent thermal performance
High reliability and efficiency
Suitable for a wide range of applications
Key Technical Parameters
Drain-to-source voltage (Vdss): 200V
Gate-to-source voltage (Vgs): ±30V
On-resistance (Rds(on)): 360mΩ at 3.9A, 10V
Continuous drain current (Id): 7.8A at 25°C
Input capacitance (Ciss): 510pF at 25V
Power dissipation (Pd): 50W
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature and high-voltage applications
Compatibility
Through-hole mounting (TO-251-3 Short Leads, IPak, TO-251AA)
Application Areas
Switch-mode power supplies
Motor drives
Lighting ballasts
Industrial and consumer electronics
Product Lifecycle
Currently available
Several Key Reasons to Choose This Product
Excellent thermal performance and reliability
Wide operating temperature range
High voltage and current handling capabilities
Low on-resistance for efficient power conversion
Suitable for a variety of high-power applications
