Manufacturer Part Number
FQPF34N20
Manufacturer
Fairchild (onsemi)
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
ROHS3 Compliant
TO-220-3 Full Pack Package
Operating Temperature: -55°C to 150°C
Drain to Source Voltage (Vdss): 200V
Gate to Source Voltage (Vgs) (Max): ±30V
On-State Resistance (Rds(on)) (Max): 75mΩ @ 8.75A, 10V
MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) Technology
Continuous Drain Current (Id) @ 25°C: 17.5A
Input Capacitance (Ciss) (Max): 3100pF @ 25V
Power Dissipation (Max): 55W
Product Advantages
High voltage and current handling capability
Low on-state resistance for improved efficiency
Suitable for high power, high frequency applications
Key Technical Parameters
N-Channel MOSFET
Threshold Voltage (Vgs(th)) (Max): 5V @ 250A
Drive Voltage (Max Rds(on), Min Rds(on)): 10V
Gate Charge (Qg) (Max): 78nC @ 10V
Quality and Safety Features
ROHS3 Compliant
Compatibility
Through Hole Mounting
Application Areas
High power, high frequency applications
Power conversion and control circuits
Product Lifecycle
Currently available
No information on discontinuation or replacements
Key Reasons to Choose This Product
High voltage and current handling capability
Low on-state resistance for improved efficiency
Suitable for high power, high frequency applications
ROHS3 compliant
Through hole mounting for easy integration