Manufacturer Part Number
FQPF33N10
Manufacturer
onsemi
Introduction
This product is a discrete semiconductor device, specifically a single N-Channel MOSFET transistor.
Product Features and Performance
Operating temperature range: -55°C to 175°C
Drain-to-Source voltage (Vdss): 100V
Maximum Gate-to-Source voltage (Vgs): ±25V
On-state resistance (Rds(on)): 52mΩ @ 9A, 10V
Continuous Drain Current (Id): 18A @ 25°C
Input Capacitance (Ciss): 1500pF @ 25V
Power Dissipation (Tc): 41W
Product Advantages
High voltage and current handling capability
Low on-state resistance for efficient power conversion
Wide operating temperature range
Key Technical Parameters
MOSFET technology: N-Channel
Threshold voltage (Vgs(th)): 4V @ 250A
Drive voltage range (Max Rds(on), Min Rds(on)): 10V
Gate charge (Qg): 51nC @ 10V
Quality and Safety Features
RoHS3 compliant
TO-220F-3 package for through-hole mounting
Compatibility
Compatible with various power conversion and control applications
Application Areas
Power supplies
Motor drives
Switching circuits
Industrial electronics
Product Lifecycle
This product is an active and widely available MOSFET solution.
Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-state resistance for efficient power conversion
Wide operating temperature range
RoHS3 compliance for environmental safety
Proven onsemi technology and reliability