Manufacturer Part Number
FQP7N80C
Manufacturer
Fairchild (onsemi)
Introduction
High-voltage, N-channel power MOSFET
Product Features and Performance
High drain-source breakdown voltage of 800V
Low on-resistance of 1.9Ω
Continuous drain current of 6.6A at 25°C
Wide operating temperature range of -55°C to 150°C
Fast switching speed and low gate charge
Product Advantages
Reliable and robust design
High-voltage capability
Low power loss
Suitable for high-power switching applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 800V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 1.9Ω
Continuous Drain Current (Id): 6.6A
Input Capacitance (Ciss): 1680pF
Power Dissipation (Pd): 167W
Quality and Safety Features
TO-220-3 package for secure and reliable mounting
Compliance with RoHS and other environmental regulations
Compatibility
Suitable for a wide range of power electronics and switching applications
Application Areas
Switching power supplies
Motor drives
Inverters
Uninterruptible power supplies (UPS)
Welding equipment
Industrial and consumer electronics
Product Lifecycle
This product is currently in production and widely available
Replacement or upgraded models may be available in the future
Key Reasons to Choose This Product
High-voltage capability for demanding applications
Low on-resistance for efficient power conversion
Fast switching speed and low gate charge for improved system performance
Robust and reliable design for long-term operation
Suitable for a wide range of power electronics and switching applications