Manufacturer Part Number
FQP7N80C
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
N-Channel MOSFET Transistor
Product Features and Performance
Drain to Source Voltage (Vdss): 800 V
Maximum Gate-Source Voltage (Vgs): ±30 V
On-State Resistance (Rds(on)): 1.9 Ω @ 3.3 A, 10 V
Continuous Drain Current (Id) @ 25°C: 6.6 A (Tc)
Input Capacitance (Ciss): 1680 pF @ 25 V
Power Dissipation (Max): 167 W (Tc)
Gate Charge (Qg): 35 nC @ 10 V
Product Advantages
High Voltage Rating (800 V)
Low On-State Resistance
High Current Handling Capability
Compact TO-220-3 Package
Key Technical Parameters
MOSFET Technology: N-Channel
Threshold Voltage (Vgs(th)): 5 V @ 250 A
Operating Temperature: -55°C to 150°C (TJ)
Mounting Type: Through Hole
Quality and Safety Features
RoHS3 Compliant
Reliable TO-220-3 Package
Compatibility
Suitable for a wide range of power electronics and switching applications
Application Areas
Power Supplies
Motor Drives
Inverters
Switch-Mode Power Supplies
Industrial and Consumer Electronics
Product Lifecycle
This product is an active and widely available MOSFET transistor.
Replacement and upgrade options are readily available from onsemi and other manufacturers.
Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-state resistance for improved efficiency
Compact and reliable TO-220-3 package
RoHS3 compliance for use in modern electronics
Broad compatibility and suitability for various power electronics applications
