Manufacturer Part Number
FQP17P10
Manufacturer
Fairchild (onsemi)
Introduction
High-performance P-channel power MOSFET in a TO-220-3 package
Product Features and Performance
Drain-to-Source Voltage (Vdss) of 100V
Maximum Gate-to-Source Voltage (Vgs) of ±30V
On-State Resistance (Rds(on)) of 190mΩ at 8.25A, 10V
Continuous Drain Current (Id) of 16.5A at 25°C (Tc)
Input Capacitance (Ciss) of 1100pF at 25V
Power Dissipation (Pd) of 100W at 25°C (Tc)
Wide Operating Temperature Range of -55°C to 175°C
Product Advantages
Low On-State Resistance for Efficient Power Switching
High Drain Current Capability
Robust Design for Reliable Operation
Wide Temperature Range for Diverse Applications
Key Technical Parameters
MOSFET Technology: P-Channel
Threshold Voltage (Vgs(th)): 4V at 250A
Drive Voltage (Max Rds(on), Min Rds(on)): 10V
Gate Charge (Qg): 39nC at 10V
Quality and Safety Features
RoHS3 Compliant
TO-220-3 Package for Reliable Thermal Management
Compatibility
Suitable for a variety of power electronics applications
Application Areas
Power supplies
Motor drives
Industrial controls
Automotive electronics
General purpose power switching
Product Lifecycle
Current product, no plans for discontinuation
Replacement and upgrade options available from the manufacturer
Several Key Reasons to Choose This Product
Excellent performance-to-cost ratio
Proven reliability and robustness
Wide operating temperature range
Ease of integration with various power electronic designs
Availability of replacement and upgrade options from the manufacturer
FQP18N20Fairchild (onsemi)