FQP17N40 - onsemi

Manufacturer Part Number

FQP17N40

Manufacturer

onsemi

Introduction

N-Channel MOSFET with high voltage, high current, and high power capabilities

Product Features and Performance

Drain to Source Voltage (Vdss) of 400 V

Continuous Drain Current (Id) of 16 A at 25°C

On-State Resistance (Rds(on)) of 270 mΩ at 8 A, 10 V

Input Capacitance (Ciss) of 2300 pF at 25 V

Power Dissipation (Pd) of 170 W at 25°C

Product Advantages

High voltage, high current, and high power handling capabilities

Low on-state resistance for efficient power conversion

Suitable for a wide range of high-power applications

Key Technical Parameters

Drain to Source Voltage (Vdss): 400 V

Gate to Source Voltage (Vgs): ±30 V

On-State Resistance (Rds(on)): 270 mΩ @ 8 A, 10 V

Continuous Drain Current (Id): 16 A @ 25°C

Input Capacitance (Ciss): 2300 pF @ 25 V

Power Dissipation (Pd): 170 W @ 25°C

Quality and Safety Features

Compliant with RoHS3 directive

Housed in a TO-220-3 package

Compatibility

Suitable for a wide range of high-power applications, such as power supplies, motor drives, and switching circuits

Application Areas

Power supplies

Motor drives

Switching circuits

High-power industrial and consumer electronics

Product Lifecycle

This product is an active, in-production part and is not nearing discontinuation.

Replacement or upgrade options may be available from the manufacturer.

Several Key Reasons to Choose This Product

High voltage, current, and power handling capabilities

Low on-state resistance for efficient power conversion

Compact and reliable TO-220-3 package

Wide temperature range of -55°C to 150°C

Suitable for a variety of high-power applications