FQD4N25TM - Fairchild Semiconductor

Manufacturer Part Number

FQD4N25TM

Manufacturer

Fairchild (onsemi)

Introduction

N-Channel MOSFET transistor

Part of the QFET series

Product Features and Performance

Drain to Source Voltage (Vdss): 250 V

Vgs (Max): ±30 V

Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 1.5 A, 10 V

Current Continuous Drain (Id) @ 25°C: 3 A (Tc)

Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V

Power Dissipation (Max): 2.5 W (Ta), 37 W (Tc)

Vgs(th) (Max) @ Id: 5 V @ 250 A

Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V

Product Advantages

High voltage rating of 250 V

Low on-state resistance

High continuous drain current

Wide operating temperature range of -55°C to 150°C

Key Technical Parameters

Technology: MOSFET (Metal Oxide)

FET Type: N-Channel

Drive Voltage (Max Rds On, Min Rds On): 10 V

Quality and Safety Features

RoHS3 Compliant

Manufacturer's packaging: TO-252, (D-Pak)

Mounting Type: Surface Mount

Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Compatibility

Supplier Device Package: TO-252, (D-Pak)

Application Areas

Suitable for various power electronics applications, such as power supplies, motor drives, and switching circuits

Product Lifecycle

This product is currently available and not nearing discontinuation.

Replacement or upgrade options may be available from the manufacturer.

Key Reasons to Choose This Product

High voltage and current handling capabilities

Low on-state resistance for efficient power conversion

Wide operating temperature range for use in diverse environments

Compact surface mount package for space-constrained designs

RoHS compliance for environmentally-friendly applications