Manufacturer Part Number
FQD4N25TM
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product - Transistors (FETs, MOSFETs) - Single
Product Features and Performance
N-Channel MOSFET
250V Drain-Source Voltage
±30V Gate-Source Voltage
75Ohm On-Resistance @ 1.5A, 10V
3A Continuous Drain Current @ 25°C
200pF Input Capacitance @ 25V
5W Power Dissipation @ 25°C, 37W @ Case
-55°C to 150°C Operating Temperature
Product Advantages
High Voltage Capability
Low On-Resistance
High Continuous Current Rating
High Power Dissipation
Key Technical Parameters
Drain-Source Voltage (Vdss): 250V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 1.75Ohm
Continuous Drain Current (Id): 3A
Input Capacitance (Ciss): 200pF
Power Dissipation (Pd): 2.5W (Ta), 37W (Tc)
Quality and Safety Features
MOSFET Technology
TO-252AA Packaging
RoHS Compliant
Compatibility
Surface Mount Mounting
Application Areas
Power Supplies
Motor Drives
Inverters
Switching Regulators
Product Lifecycle
Currently available
No information on discontinuation or replacements
Key Reasons to Choose
High Voltage Capability
Low On-Resistance
High Current and Power Rating
Wide Operating Temperature Range
Compact Surface Mount Package