Manufacturer Part Number
FQA19N60
Manufacturer
Fairchild (onsemi)
Introduction
High-power N-channel MOSFET transistor with excellent performance characteristics.
Product Features and Performance
High voltage rating of 600V
Very low on-resistance of 380mΩ
High continuous drain current of 18.5A at 25°C
Wide operating temperature range of -55°C to 150°C
Low gate charge of 90nC for efficient switching
High power dissipation capability of 300W
Product Advantages
Robust and reliable design for high-power applications
Efficient power handling with low conduction losses
Suitable for a wide range of operating conditions
Fast and efficient switching characteristics
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 380mΩ @ 9.3A, 10V
Continuous Drain Current (Id): 18.5A @ 25°C
Input Capacitance (Ciss): 3600pF @ 25V
Power Dissipation (Pd): 300W @ 25°C
Quality and Safety Features
Robust TO-3P-3 package with high thermal performance
Designed and manufactured to high quality standards
Suitable for use in demanding industrial and automotive applications
Compatibility
Compatible with a wide range of electronic circuits and systems
Suitable for use in power supplies, motor drives, and other high-power applications
Application Areas
Power conversion and control
Motor drives and industrial automation
Lighting and power management systems
Automotive and transportation applications
Product Lifecycle
Currently in active production, with no plans for discontinuation
Readily available from multiple authorized distributors
Potential future upgrades or replacements may offer improved performance or features
Key Reasons to Choose This Product
Exceptional power handling and efficiency
Robust and reliable design for industrial and automotive applications
Wide operating temperature range and compatibility
Efficient switching characteristics for fast and responsive power control
Available from a reputable manufacturer with a strong track record of quality and support