Manufacturer Part Number
FQA19N60
Manufacturer
onsemi
Introduction
High-power N-channel MOSFET transistor with high voltage and low on-resistance.
Product Features and Performance
Operates at high voltages up to 600V
Low on-resistance of 380mOhm at 9.3A, 10V
Continuous drain current of 18.5A at 25°C
Wide operating temperature range of -55°C to 150°C
Fast switching and low gate charge of 90nC at 10V
Product Advantages
Excellent power handling capability
High efficiency and low power losses
Reliable performance in high-power applications
Versatile and suitable for various circuit designs
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 380mOhm
Continuous Drain Current (Id): 18.5A
Input Capacitance (Ciss): 3600pF
Quality and Safety Features
Robust TO-3P-3 package for high thermal dissipation
Adheres to quality and safety standards for industrial applications
Compatibility
Suitable for high-power switching, amplifier, and power supply circuits
Can be used in various industrial, automotive, and power electronics applications
Application Areas
High-power motor drives
Switched-mode power supplies
Inverters and converters
Industrial and automotive electronics
Product Lifecycle
This product is currently available and not nearing discontinuation
Replacement or upgraded models may become available in the future as technology advances
Several Key Reasons to Choose This Product
Excellent power handling and efficiency for high-power applications
Reliable performance across a wide operating temperature range
Versatile and compatible with various circuit designs
Robust packaging and adherence to quality/safety standards
Availability and potential for future upgrades or replacements