Manufacturer Part Number
FJPF13007H2TU
Manufacturer
Fairchild (onsemi)
Introduction
High-voltage, high-power NPN silicon transistor
Product Features and Performance
Wide operating temperature range up to 150°C
High power handling capacity up to 40W
High collector-emitter breakdown voltage up to 400V
High collector current up to 8A
Low collector-emitter saturation voltage
Product Advantages
Excellent performance in high-voltage, high-current applications
Robust design for reliable operation
Suitable for use in power supplies, motor drives, and industrial control systems
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 400V
Current Collector (Ic) (Max): 8A
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
Transistor Type: NPN
DC Current Gain (hFE) (Min) @ Ic, Vce: 26 @ 2A, 5V
Frequency Transition: 4MHz
Quality and Safety Features
Designed and manufactured to high quality standards
Robust construction for reliable operation
Compliance with relevant safety regulations
Compatibility
Compatible with standard TO-220 mounting and footprint
Application Areas
Power supplies
Motor drives
Industrial control systems
Amplifiers
Switching circuits
Product Lifecycle
This product is currently in production and actively supported by the manufacturer
Replacement or upgraded products may be available in the future
Several Key Reasons to Choose This Product
High-performance and reliable operation in high-voltage, high-current applications
Wide operating temperature range and power handling capacity
Robust design for reliable long-term use
Compatibility with standard mounting and footprint
Manufacturer's reputation for quality and reliability