FJPF13007H2TU - onsemi

Manufacturer Part Number

FJPF13007H2TU

Manufacturer

onsemi

Introduction

High-power NPN silicon bipolar transistor

Product Features and Performance

Designed for high-power switching and amplification applications

High voltage and high current capability

Low collector-emitter saturation voltage

Product Advantages

Reliable and robust performance

Suitable for high-power applications

Low on-state resistance for efficient power conversion

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 400 V

Current Collector (Ic) (Max): 8 A

Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A

DC Current Gain (hFE) (Min) @ Ic, Vce: 26 @ 2A, 5V

Frequency Transition: 4 MHz

Quality and Safety Features

RoHS3 compliant

Designed for reliable and safe operation

Compatibility

TO-220-3 package

Compatible with various high-power electronic applications

Application Areas

High-power switching and amplification circuits

Power supplies

Motor drives

Industrial electronics

Product Lifecycle

This product is currently available and not nearing discontinuation

Replacement or upgrade options may be available depending on specific application requirements

Key Reasons to Choose This Product

High voltage and current capability for demanding applications

Low saturation voltage for efficient power conversion

Robust and reliable performance

Suitable for a wide range of high-power electronic applications