Manufacturer Part Number
FDS9953A
Manufacturer
Fairchild (onsemi)
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Arrays
Product Features and Performance
2 P-Channel (Dual) MOSFET
Power Max: 900mW
Drain to Source Voltage (Vdss): 30V
Rds On (Max) @ Id, Vgs: 130mOhm @ 1A, 10V
Current Continuous Drain (Id) @ 25°C: 2.9A
Input Capacitance (Ciss) (Max) @ Vds: 185pF @ 15V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V
Product Advantages
High power density
Low on-resistance
Logic level gate
Key Technical Parameters
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Quality and Safety Features
Manufacturer's packaging: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Series: PowerTrench
Package: Bulk
Compatibility
Base Product Number: FDS99
Application Areas
Suitable for a wide range of power management and control applications
Product Lifecycle
Currently in production
Replacements or upgrades may be available in the future
Several Key Reasons to Choose This Product
High power capability
Low on-resistance for efficient performance
Logic level gate for easy integration
Robust thermal and packaging characteristics
Compatibility with a wide range of applications