FDS9953A - onsemi

Manufacturer Part Number

FDS9953A

Manufacturer

onsemi

Introduction

Dual P-channel MOSFET in an 8-SOIC (0.154", 3.90mm Width) package

Product Features and Performance

Drain to Source Voltage (Vdss) of 30V

On-Resistance (Rds(on)) of 130mOhm @ 1A, 10V

Continuous Drain Current (Id) of 2.9A @ 25°C

Input Capacitance (Ciss) of 185pF @ 15V

Gate Threshold Voltage (Vgs(th)) of 3V @ 250μA

Gate Charge (Qg) of 3.5nC @ 10V

Operating Temperature range of -55°C to 150°C

Product Advantages

PowerTrench MOSFET technology for improved performance

Logic level gate drive for easy interface with control circuitry

Compact 8-SOIC package for space-constrained applications

Key Technical Parameters

Transistor Configuration: Dual P-Channel MOSFET

Package: 8-SOIC (0.154", 3.90mm Width)

Power Dissipation: 900mW

Packaging: Tape & Reel (TR)

Quality and Safety Features

RoHS3 compliant

Compatibility

Surface mount package for easy integration into PCB designs

Application Areas

Suitable for various power management and control applications

Product Lifecycle

Active product, no indication of planned obsolescence or discontinuation

Key Reasons to Choose This Product

Excellent on-resistance and current handling capabilities

Compact 8-SOIC package for space-efficient designs

Logic level gate drive for easy interfacing with control circuitry

Wide operating temperature range of -55°C to 150°C

RoHS3 compliance for environmentally-friendly applications