Manufacturer Part Number
FDS8926A
Manufacturer
Fairchild (onsemi)
Introduction
Dual N-Channel MOSFET array
Product Features and Performance
30V Drain-Source Voltage
5A Continuous Drain Current
30mΩ Maximum On-Resistance
900pF Maximum Input Capacitance
28nC Maximum Gate Charge
Logic Level Gate
Wide Operating Temperature Range: -55°C to 150°C
Product Advantages
Compact 8-SOIC package
Robust MOSFET design
Efficient power handling
Suitable for various power management applications
Key Technical Parameters
Package: 8-SOIC
Configuration: 2 N-Channel Transistors
Drain-Source Voltage (Vdss): 30V
On-Resistance (Rds(on)): 30mΩ
Continuous Drain Current (Id): 5.5A
Input Capacitance (Ciss): 900pF
Gate Threshold Voltage (Vgs(th)): 1V
Gate Charge (Qg): 28nC
Power Dissipation: 900mW
Quality and Safety Features
RoHS3 Compliant
Wide operating temperature range
Compatibility
Surface mount technology (SMT) compatible
Application Areas
Power management
Motor control
Battery charging systems
Telecommunications equipment
Industrial automation
Product Lifecycle
Current product, no discontinuation or replacement plans known
Key Reasons to Choose This Product
Excellent power handling capabilities
Efficient and reliable MOSFET design
Compact 8-SOIC package for space-constrained applications
Wide operating temperature range for versatile use
RoHS3 compliance for environmental responsibility
FDS89161LZ MOSAMI Semiconductor/onsemi