FDS89161 - onsemi

Manufacturer Part Number

FDS89161

Manufacturer

onsemi

Introduction

Dual N-Channel MOSFET transistor

Product Features and Performance

PowerTrench MOSFET technology

100V drain-to-source voltage (Vdss)

105mΩ maximum on-resistance (Rds(on)) at 2.7A, 10V

7A continuous drain current (Id) at 25°C

210pF maximum input capacitance (Ciss) at 50V

4V maximum gate-to-source threshold voltage (Vgs(th)) at 250µA

1nC maximum gate charge (Qg) at 10V

Product Advantages

Efficient power management

Low on-resistance for low power loss

High current handling capability

Suitable for a wide range of power applications

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 100V

On-Resistance (Rds(on)): 105mΩ @ 2.7A, 10V

Continuous Drain Current (Id): 2.7A @ 25°C

Input Capacitance (Ciss): 210pF @ 50V

Gate-to-Source Threshold Voltage (Vgs(th)): 4V @ 250µA

Gate Charge (Qg): 4.1nC @ 10V

Quality and Safety Features

RoHS3 compliant

Operating temperature range: -55°C to 150°C

Compatibility

8-SOIC (0.154", 3.90mm Width) package

Compatible with standard surface mount assembly processes

Application Areas

Power management circuits

Switching power supplies

Motor drives

Amplifiers

General purpose power switching

Product Lifecycle

This product is an active and widely available MOSFET solution from onsemi.

Several Key Reasons to Choose This Product

Efficient power management capabilities with low on-resistance

High current handling for a wide range of power applications

Compact 8-SOIC surface mount package for space-constrained designs

Wide operating temperature range for harsh environment use

RoHS3 compliance for environmentally-friendly applications