Manufacturer Part Number
FDS6675BZ
Manufacturer
Fairchild (onsemi)
Introduction
High-performance P-channel power MOSFET
Product Features and Performance
Low on-resistance (Rds(on)) of 13 mΩ at 11 A, 10 V
High current capability of 11 A at 25°C
Low gate charge (Qg) of 62 nC at 10 V
Wide operating temperature range of -55°C to 150°C
High drain-to-source voltage (Vdss) of 30 V
Low input capacitance (Ciss) of 2470 pF at 15 V
Product Advantages
Excellent power efficiency
High power density
Reliable and robust design
Wide application flexibility
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30 V
Gate-to-Source Voltage (Vgs): ±25 V
On-Resistance (Rds(on)): 13 mΩ @ 11 A, 10 V
Continuous Drain Current (Id): 11 A at 25°C
Input Capacitance (Ciss): 2470 pF at 15 V
Power Dissipation (Pd): 2.5 W at 25°C
Quality and Safety Features
Robust design for reliable operation
Stringent quality control measures
Compliance with industry standards
Compatibility
Suitable for a wide range of power management applications
Application Areas
Switching power supplies
Motor drives
Battery chargers
Industrial and consumer electronics
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
Excellent power efficiency and high power density
Robust and reliable design for long-term operation
Wide operating temperature range and high voltage capability
Suitable for a variety of power management applications
Ongoing availability and potential for replacement or upgrade options
FDS6675BZ_NLAMI Semiconductor/onsemi