Manufacturer Part Number
FDS6673BZ
Manufacturer
onsemi
Introduction
Discrete Semiconductor Power MOSFET Transistor
Product Features and Performance
P-Channel MOSFET
30V Drain-Source Voltage
5A Continuous Drain Current
8mOhm On-Resistance
4700pF Input Capacitance
124nC Gate Charge
-55°C to 150°C Operating Temperature Range
5W Power Dissipation
Product Advantages
Low On-Resistance for Efficient Power Switching
High Current Handling Capability
Wide Operating Temperature Range
Compact Surface Mount Package
Key Technical Parameters
Drain-Source Voltage (Vdss): 30V
Gate-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 7.8mOhm
Continuous Drain Current (Id): 14.5A
Input Capacitance (Ciss): 4700pF
Gate Charge (Qg): 124nC
Power Dissipation (Pd): 2.5W
Quality and Safety Features
RoHS3 Compliant
AEC-Q101 Qualified
Compatibility
Surface Mount (8-SOIC) Package
Suitable for Tape & Reel Automated Assembly
Application Areas
Power Switching
Motor Control
Power Supplies
Converters and Inverters
Product Lifecycle
Current Product
Availability of Replacements and Upgrades
Key Reasons to Choose This Product
Excellent Power Handling and Efficiency
Wide Operating Temperature Range
Compact Surface Mount Package
RoHS3 Compliance and AEC-Q101 Qualification
Suitability for Automated Assembly
