FDS6612A - Fairchild Semiconductor

Manufacturer Part Number

FDS6612A

Manufacturer

Fairchild (onsemi)

Introduction

High-performance N-Channel MOSFET transistor

Product Features and Performance

Wide operating temperature range of -55°C to 150°C

Low on-resistance of 22 mΩ @ 8.4 A, 10 V

High drain current capacity of 8.4 A (continuous) at 25°C

Low input capacitance of 560 pF @ 15 V

Compact 8-SOIC surface-mount package

Product Advantages

Excellent thermal performance for high power applications

Efficient power delivery with low conduction losses

Space-saving package design for high-density PCB layouts

Reliable operation in harsh environments

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 30 V

Gate-to-Source Voltage (Vgs): ±20 V

Threshold Voltage (Vgs(th)): 3 V @ 250 A

Drive Voltage Range: 4.5 V to 10 V

Input Capacitance (Ciss): 560 pF @ 15 V

Power Dissipation (Ta): 2.5 W

Quality and Safety Features

MOSFET technology for high reliability and durability

RoHS-compliant and halogen-free for environmental safety

Rigorous quality control and testing procedures

Compatibility

Suitable for a wide range of power electronics applications

Interchangeable with similar N-Channel MOSFET devices

Application Areas

Switching power supplies

Motor drives

Industrial automation and control systems

Telecommunications equipment

Automotive electronics

Product Lifecycle

Currently in production

No plans for discontinuation

Replacement or upgrade options available if needed

Key Reasons to Choose

Excellent thermal management and power handling capabilities

Efficient power delivery with low conduction losses

Reliable and durable performance in harsh environments

Compact surface-mount package for space-constrained designs

Wide availability and compatibility with various applications