Manufacturer Part Number
FDS6612A
Manufacturer
onsemi
Introduction
The FDS6612A is a N-channel PowerTrench MOSFET that offers high performance and reliability in a compact 8-SOIC package.
Product Features and Performance
30V Drain-to-Source Voltage
22mΩ Maximum On-Resistance
4A Continuous Drain Current at 25°C
560pF Maximum Input Capacitance
5W Power Dissipation
Product Advantages
Compact 8-SOIC surface mount package
High current handling capability
Low on-resistance for improved efficiency
Wide temperature range operation (-55°C to 150°C)
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 22mΩ @ 8.4A, 10V
Drain Current (Id): 8.4A (Continuous)
Input Capacitance (Ciss): 560pF @ 15V
Power Dissipation (Pd): 2.5W
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified
Compatibility
Compatible with a wide range of electronic circuits and systems requiring high-performance power switching.
Application Areas
Power supplies
Motor drives
Switching regulators
Battery chargers
Industrial controls
Product Lifecycle
The FDS6612A is a current production device and is not nearing discontinuation. Replacement and upgrade options are available.
Key Reasons to Choose this Product
Excellent performance-to-size ratio in a compact 8-SOIC package
Low on-resistance for improved efficiency
Wide temperature range operation
RoHS3 compliance and AEC-Q101 qualification for high reliability
Readily available and supported by onsemi
FDS6612AMI Semiconductor/onsemi