Manufacturer Part Number
FDPF55N06
Manufacturer
Fairchild (onsemi)
Introduction
High-performance N-channel MOSFET transistor with low on-resistance and high current capability.
Product Features and Performance
60V drain-to-source voltage (Vdss)
±25V maximum gate-to-source voltage (Vgs(max))
22mΩ maximum on-resistance (Rds(on)) at 27.5A, 10V
55A continuous drain current (Id) at 25°C case temperature (Tc)
1510pF maximum input capacitance (Ciss) at 25V
48W maximum power dissipation at 25°C case temperature (Tc)
-55°C to 150°C operating temperature range
Product Advantages
Excellent on-resistance performance for efficient power handling
High current capability for demanding applications
Wide operating temperature range for versatile use
Key Technical Parameters
N-channel MOSFET transistor
60V drain-to-source voltage (Vdss)
±25V maximum gate-to-source voltage (Vgs(max))
22mΩ maximum on-resistance (Rds(on)) at 27.5A, 10V
55A continuous drain current (Id) at 25°C case temperature (Tc)
Quality and Safety Features
TO-220F-3 package with through-hole mounting
Designed and manufactured to high quality standards
Compatibility
Suitable for a variety of power electronics and motor control applications
Application Areas
Switching power supplies
Motor drives
Industrial automation and control
Automotive electronics
Product Lifecycle
This product is an active and ongoing offering from Fairchild (onsemi)
Replacement or upgraded options may be available in the future
Several Key Reasons to Choose This Product
Excellent on-resistance performance for efficient power handling
High current capability for demanding applications
Wide operating temperature range for versatile use
Designed and manufactured to high quality standards
Suitable for a variety of power electronics and motor control applications
FDPF5N50NZFonsemiPOWER FIELD-EFFECT TRANSISTOR, 4