Manufacturer Part Number
FDPF51N25
Manufacturer
onsemi
Introduction
High-performance N-channel power MOSFET transistor
Product Features and Performance
Drain-to-Source Voltage (Vdss) of 250V
Extremely low on-resistance (Rds(on)) of 60mΩ at 25.5A, 10V
Continuous Drain Current (ID) of 51A at 25°C case temperature
Input Capacitance (Ciss) of 3410pF at 25V
Power Dissipation (Pd) of 38W at 25°C case temperature
Wide Operating Temperature range of -55°C to 150°C
Product Advantages
Excellent performance in high-voltage, high-current applications
Low conduction losses for improved efficiency
Robust and reliable design for demanding applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 250V
Gate-to-Source Voltage (Vgs): ±30V
Drain-to-Source On-Resistance (Rds(on)): 60mΩ
Continuous Drain Current (ID): 51A
Input Capacitance (Ciss): 3410pF
Power Dissipation (Pd): 38W
Quality and Safety Features
RoHS3 compliant
TO-220F-3 package for secure mounting and heat dissipation
Compatibility
Suitable for a wide range of power electronics and motor control applications
Application Areas
Switch-mode power supplies
Motor drives
Power inverters
Industrial and automotive electronics
Product Lifecycle
Current product, no immediate plans for discontinuation
Replacements and upgrades may be available in the future
Several Key Reasons to Choose This Product
Excellent performance in high-voltage, high-current applications
Low conduction losses for improved efficiency
Robust and reliable design for demanding applications
Wide operating temperature range for versatile use
RoHS3 compliance for environmental friendliness