Manufacturer Part Number
FDP80N06
Manufacturer
Fairchild (onsemi)
Introduction
High-performance N-channel MOSFET transistor with low on-resistance and high current capability.
Product Features and Performance
Extremely low on-resistance of 10 mΩ
Continuous drain current of 80A at 25°C case temperature
Maximum power dissipation of 176W at 25°C case temperature
Wide operating temperature range of -55°C to 175°C
Fast switching speed
Low gate charge of 74 nC at 10V
Product Advantages
Excellent thermal management and high power density
Efficient power conversion and low power loss
Reliable and robust performance in high-current applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 60V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 10 mΩ at 40A, 10V
Input Capacitance (Ciss): 3190 pF at 25V
Gate Charge (Qg): 74 nC at 10V
Quality and Safety Features
Robust TO-220-3 package construction
Designed and manufactured to high quality standards
Compliance with relevant safety and environmental regulations
Compatibility
Suitable for a wide range of power conversion and control applications
Easily integrated into existing designs
Application Areas
Switching power supplies
Motor drives
Inverters
Electric vehicles
Industrial automation and control
Product Lifecycle
Currently in production
No plans for discontinuation, but industry-standard lifecycle applies
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Exceptional power handling and efficiency
Reliable and robust performance in high-current applications
Proven track record and trusted brand
Readily available and easily integrated into existing designs
Competitive pricing and long-term availability
FDP7N60NZonsemiPOWER FIELD-EFFECT TRANSISTOR, 6