FDP80N06 - onsemi

Manufacturer Part Number

FDP80N06

Manufacturer

onsemi

Introduction

High-performance N-channel MOSFET with low on-resistance and high current capability

Product Features and Performance

Extremely low on-resistance of 10 mΩ @ 40 A, 10 V

Continuous drain current of 80 A at 25°C case temperature

Wide operating temperature range of -55°C to 175°C

Low input capacitance of 3190 pF @ 25 V

High power dissipation of 176 W at 25°C case temperature

Product Advantages

Excellent thermal performance for efficient power conversion

High current handling capability for demanding applications

Robust design for reliable operation in harsh environments

Key Technical Parameters

Drain-to-source voltage (Vdss): 60 V

Gate-to-source voltage (Vgs): ±20 V

Threshold voltage (Vgs(th)): 4 V @ 250 A

Gate charge (Qg): 74 nC @ 10 V

On-resistance (Rds(on)): 10 mΩ @ 40 A, 10 V

Quality and Safety Features

ROHS3 compliant

Designed and manufactured to the highest quality standards

Compatibility

Through-hole mounting in TO-220-3 package

Application Areas

High-current power supplies

Motor drives

Inverters and converters

Industrial and transportation applications

Product Lifecycle

Currently in production

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

Exceptional efficiency and power density

Reliable performance in harsh environments

Flexibility for a wide range of high-current applications

Backed by onsemi's reputation for quality and innovation