Manufacturer Part Number
FDP61N20
Manufacturer
Fairchild (onsemi)
Introduction
High-performance N-Channel MOSFET transistor suitable for use in a variety of power conversion and switching applications.
Product Features and Performance
High current capability of 61A at 25°C
Low on-resistance of 41mΩ at 10V gate-source voltage
Wide operating temperature range of -55°C to 150°C
Fast switching with a maximum gate charge of 75nC at 10V
Rugged design with a high drain-source voltage rating of 200V
Product Advantages
Excellent power efficiency due to low on-resistance
Reliable operation over a wide temperature range
Efficient and fast switching performance
Robust design for demanding applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 200V
Gate-Source Voltage (Vgs): ±30V
Drain Current (Id): 61A at 25°C
On-Resistance (Rds(on)): 41mΩ at 10V, 30.5A
Input Capacitance (Ciss): 3380pF at 25V
Power Dissipation (Ptot): 417W at 25°C
Quality and Safety Features
Designed and manufactured to high quality standards
Robust construction for reliable long-term operation
Compliant with relevant safety and environmental regulations
Compatibility
Suitable for a wide range of power conversion and switching applications
Can be used as a direct replacement for similar MOSFETs in existing designs
Application Areas
Switch-mode power supplies
Motor drives
Inverters and converters
Industrial and automotive electronics
Product Lifecycle
Currently in active production
No plans for discontinuation at this time
Replacement or upgrade options available if required
Key Reasons to Choose This Product
High current capability and low on-resistance for efficient power conversion
Reliable performance over a wide temperature range
Fast and efficient switching for improved system performance
Robust design for demanding applications
Compatibility with a wide range of power electronics systems
