Manufacturer Part Number
FDP61N20
Manufacturer
onsemi
Introduction
Power MOSFET transistor for high-power applications
Product Features and Performance
200V Drain-Source Voltage (Vdss)
61A Continuous Drain Current (Id) at 25°C
41mΩ On-State Resistance (Rds(on)) at 10V Gate-Source Voltage
3380pF Input Capacitance (Ciss) at 25V Drain-Source Voltage
417W Power Dissipation at 25°C Case Temperature
N-Channel MOSFET topology
Product Advantages
Suitable for high-power switching applications
Low on-state resistance for efficient power conversion
High voltage and current handling capabilities
Robust design for reliable operation
Key Technical Parameters
Drain-Source Voltage (Vdss): 200V
Gate-Source Voltage (Vgs): ±30V
On-State Resistance (Rds(on)): 41mΩ
Continuous Drain Current (Id): 61A
Input Capacitance (Ciss): 3380pF
Power Dissipation: 417W
Quality and Safety Features
RoHS3 compliant
TO-220-3 package for reliable through-hole mounting
Compatibility
Suitable for a wide range of high-power switching applications
Application Areas
Switching power supplies
Motor drives
Industrial controls
Automotive electronics
Product Lifecycle
Current production model, no known discontinuation plans
Replacement or upgrade options available from manufacturer
Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-state resistance for efficient power conversion
Robust design for reliable operation in demanding applications
RoHS3 compliance for environmental responsibility
Availability of replacement and upgrade options from the manufacturer
