Manufacturer Part Number
FDMS8670S
Manufacturer
Fairchild (onsemi)
Introduction
High-performance N-channel MOSFET transistor
Part of the PowerTrench and SyncFET series
Product Features and Performance
Low on-resistance (Rds(on)) of 3.5 mOhm at 20A, 10V
High current capability of 20A (Ta) and 42A (Tc)
Wide operating temperature range of -55°C to 150°C (TJ)
Low gate charge (Qg) of 73 nC at 10V
Low input capacitance (Ciss) of 4000 pF at 15V
Supports high gate voltage of ±20V
Product Advantages
Excellent power efficiency and thermal performance
Suitable for high-current, high-frequency switching applications
Robust design for reliable operation
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
Gate to Source Voltage (Vgs): ±20V
Continuous Drain Current (Id): 20A (Ta), 42A (Tc)
Power Dissipation: 2.5W (Ta), 78W (Tc)
FET Type: N-Channel
Threshold Voltage (Vgs(th)): 3V @ 1mA
Drive Voltage: 4.5V (max Rds(on)), 10V (min Rds(on))
Quality and Safety Features
Housed in an 8-PQFN (5x6) package for improved thermal management
Robust PowerTrench technology for reliable performance
Compatibility
Surface mount package suitable for automated assembly
Application Areas
Switching power supplies
Motor drives
DC-DC converters
Synchronous rectification
Industrial automation equipment
Product Lifecycle
Current production model
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent power efficiency and thermal performance
High current handling capability
Wide operating temperature range
Robust and reliable design
Suitable for high-frequency, high-power switching applications
FDMS8670SonsemiPOWER FIELD-EFFECT TRANSISTOR, 2