Manufacturer Part Number
FDMS8672S
Manufacturer
onsemi
Introduction
High-performance N-channel MOSFET transistor for power management and switching applications
Product Features and Performance
30V drain-to-source voltage
5mΩ maximum on-state resistance at 17A drain current and 10V gate-to-source voltage
17A continuous drain current at 25°C ambient temperature
35A continuous drain current at 25°C case temperature
Low gate charge of 47nC at 10V gate-to-source voltage
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent on-state resistance for high efficiency
High current capability for power-dense designs
Compact 8-PQFN (5x6) package
Key Technical Parameters
Drain-to-source voltage (Vdss): 30V
Maximum gate-to-source voltage (Vgs): ±20V
Continuous drain current (Id): 17A (at 25°C ambient), 35A (at 25°C case)
On-state resistance (Rds(on)): 5mΩ (at 17A, 10V)
Input capacitance (Ciss): 2515pF (at 15V)
Power dissipation: 2.5W (at 25°C ambient), 50W (at 25°C case)
Quality and Safety Features
AEC-Q101 qualified for automotive applications
RoHS compliant
Compatibility
Compatible with various power management and switching applications
Application Areas
Power supplies
Motor drives
Industrial automation
Automotive electronics
Product Lifecycle
Currently in production
Replacements or upgrades may be available in the future
Key Reasons to Choose This Product
Excellent on-state resistance for high efficiency
High current capability for power-dense designs
Compact package size
Wide operating temperature range
AEC-Q101 qualification for automotive applications
RoHS compliance for environmental safety
