Manufacturer Part Number
FDD6612A
Manufacturer
Fairchild (onsemi)
Introduction
High-performance N-channel Power MOSFET with low on-resistance and fast switching speed
Product Features and Performance
Extremely low on-resistance (RDS(on) = 20 mOhm)
High current handling capability (ID = 9.5 A continuous, 30 A pulsed)
Fast switching speed
Wide operating temperature range (-55°C to 175°C)
Low gate charge (Qg = 9.4 nC)
Low input capacitance (Ciss = 660 pF)
High gate-source voltage rating (±20 V)
Product Advantages
Excellent power efficiency and thermal management
Reliable and robust performance
Suitable for high-frequency, high-current applications
Key Technical Parameters
Drain-Source Voltage (VDS): 30 V
Gate-Source Voltage (VGS): ±20 V
On-Resistance (RDS(on)): 20 mOhm
Continuous Drain Current (ID): 9.5 A (Ta), 30 A (Tc)
Input Capacitance (Ciss): 660 pF
Power Dissipation (PD): 2.8 W (Ta), 36 W (Tc)
Quality and Safety Features
Robust package design (TO-252, D-Pak)
Extensive testing and quality control measures
Compliance with industry standards and regulations
Compatibility
Suitable for a wide range of power electronics applications, including power supplies, motor drives, and power converters
Application Areas
Power supplies
Motor drives
Power converters
Industrial and automotive electronics
Product Lifecycle
Currently in active production
No known plans for discontinuation
Replacement or upgrade options available if needed
Key Reasons to Choose This Product
Exceptional power efficiency and thermal performance
Reliable and robust design for demanding applications
Fast switching capability for high-frequency operation
Wide operating temperature range for versatile use
Compact and easy-to-integrate package