Manufacturer Part Number
FDD6612A
Manufacturer
onsemi
Introduction
High-performance, high-reliability N-channel power MOSFET for power management and control applications
Product Features and Performance
High-power handling capability
Low on-resistance for efficient power conversion
Fast switching speed
High temperature operation up to 175°C
Product Advantages
Excellent efficiency in power conversion
Reliable and robust design
Suitable for high-temperature environments
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
Maximum Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rdson): 20mΩ @ 9.5A, 10V
Continuous Drain Current (Id): 9.5A (Ta), 30A (Tc)
Input Capacitance (Ciss): 660pF @ 15V
Power Dissipation: 2.8W (Ta), 36W (Tc)
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature applications
Compatibility
Surface mount (TO-252AA package)
Compatible with various power management and control circuits
Application Areas
Power supplies
Inverters
Motor drives
Battery charging systems
Industrial controls
Product Lifecycle
Current product, no signs of discontinuation
Replacements and upgrades available as technology advances
Key Reasons to Choose This Product
High efficiency and low power losses
Reliable and robust design for high-temperature operation
Compact surface mount package for space-constrained designs
Proven performance in a wide range of power management and control applications