Manufacturer Part Number
FDB150N10
Manufacturer
Fairchild (onsemi)
Introduction
The FDB150N10 is a N-Channel MOSFET transistor from Fairchild (onsemi) in a DPAK (TO-263) package.
Product Features and Performance
Drain to Source Voltage (Vdss) of 100V
Maximum Gate-Source Voltage (Vgs) of ±20V
Maximum On-Resistance (Rds(on)) of 15mΩ @ 49A, 10V
Continuous Drain Current (Id) of 57A @ 25°C (Tc)
Input Capacitance (Ciss) of 4760pF @ 25V
Maximum Power Dissipation of 110W @ Tc
Operating Temperature Range of -55°C to 150°C
Product Advantages
Low on-resistance for efficient power conversion
High current handling capability
Wide operating temperature range
Suitable for high-voltage, high-power applications
Key Technical Parameters
MOSFET Technology: N-Channel
Threshold Voltage (Vgs(th)) of 4.5V @ 250A
Drive Voltage Range: 10V
Gate Charge (Qg) of 69nC @ 10V
Surface Mount Packaging
Quality and Safety Features
Meets industrial-grade quality and reliability standards
Robust DPAK (TO-263) package for high-power applications
Compatibility
Suitable for use in a wide range of power electronics and industrial applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Power factor correction circuits
Industrial automation and control systems
Product Lifecycle
This product is currently in active production and availability.
Replacements or upgrades may be available in the future as technology evolves.
Key Reasons to Choose This Product
Excellent performance characteristics, including low on-resistance and high current handling
Robust and reliable DPAK (TO-263) package
Wide operating temperature range for use in demanding environments
Suitable for high-voltage, high-power applications where efficiency and thermal management are critical
FDB1D7N10CL7onsemiMOSFET N-CH 100V 268A D2PAK