Manufacturer Part Number
FDB14N30TM
Manufacturer
onsemi
Introduction
The FDB14N30TM is a high-performance N-Channel MOSFET transistor from onsemi, designed for a wide range of power conversion and control applications.
Product Features and Performance
300V Drain-to-Source Voltage (Vdss)
14A Continuous Drain Current (Id) at 25°C
290mΩ Max On-State Resistance (Rds(on)) at 7A, 10V
1060pF Max Input Capacitance (Ciss) at 25V
140W Max Power Dissipation at 25°C
-55°C to 150°C Operating Temperature Range
Product Advantages
Excellent switching performance for high-efficiency power conversion
High voltage and current handling capabilities
Low on-state resistance for minimal power losses
Compact DPAK (TO-263) surface-mount package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 300V
Gate-to-Source Voltage (Vgs): ±30V
On-State Resistance (Rds(on)): 290mΩ @ 7A, 10V
Continuous Drain Current (Id): 14A at 25°C
Input Capacitance (Ciss): 1060pF @ 25V
Power Dissipation (Tc): 140W
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Welding equipment
Industrial and consumer electronics
Product Lifecycle
This product is currently in active production and available for purchase.
Replacement or upgraded options may become available in the future as technology advances.
Key Reasons to Choose This Product
Excellent switching performance for high-efficiency power conversion
High voltage and current handling capabilities
Low on-state resistance for minimal power losses
Compact and thermally efficient DPAK (TO-263) package
Designed and manufactured to high quality and safety standards
Suitable for a wide range of power conversion and control applications
