Manufacturer Part Number
FCH35N60
Manufacturer
Fairchild (onsemi)
Introduction
High-performance power MOSFET transistor
Designed for various power conversion and control applications
Product Features and Performance
Operates in the temperature range of -55°C to 150°C
Drain to Source Voltage (Vdss) of 600V
Maximum Gate-Source Voltage (Vgs) of ±30V
Low On-State Resistance (Rds(on)) of 98mΩ @ 17.5A, 10V
Continuous Drain Current (Id) of 35A at 25°C
Input Capacitance (Ciss) of 6640pF @ 25V
Power Dissipation (Pd) of 312.5W at 25°C
Product Advantages
Excellent switching performance
High voltage and current handling capability
Low on-state resistance for improved efficiency
Suitable for a wide range of power conversion and control applications
Key Technical Parameters
MOSFET technology
N-Channel
Threshold Voltage (Vgs(th)) of 5V @ 250A
Drive Voltage range of 10V
Quality and Safety Features
Robust TO-247 package
Suitable for through-hole mounting
Compatibility
Widely compatible with various power electronics systems and applications
Application Areas
Switch-mode power supplies
Motor drives
Lighting and industrial controls
Welding equipment
Induction heating
Renewable energy systems
Product Lifecycle
This product is an active and widely available MOSFET solution
Replacements and upgrades may be available as technology evolves
Key Reasons to Choose This Product
High efficiency and performance due to low on-state resistance
Reliable and robust design for demanding applications
Versatile compatibility with a wide range of power electronics systems
Proven track record and continued availability from a reputable manufacturer