Manufacturer Part Number
FCH47N60F
Manufacturer
onsemi
Introduction
High-performance N-Channel MOSFET with enhanced power density and efficiency for high-power switching applications
Product Features and Performance
Rated for 600V drain-to-source voltage
Supports continuous drain current up to 47A at 25°C case temperature
Very low on-resistance of 73 milliohms at 23.5A, 10V
Wide operating temperature range of -55°C to 150°C
Fast switching speed and low gate charge for efficient operation
Rugged design with high avalanche energy rating
Product Advantages
Optimized for high-efficiency, high-power switching in industrial, automotive, and power supply applications
Robust performance and reliability
Compact TO-247-3 package enables high power density
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 73 milliohms @ 23.5A, 10V
Continuous Drain Current (Id): 47A @ 25°C case temperature
Input Capacitance (Ciss): 8000 pF @ 25V
Power Dissipation (Pd): 417W @ 25°C case temperature
Quality and Safety Features
Robust design and construction for reliable, long-lasting performance
Tested and qualified to meet stringent quality and safety standards
Compatibility
Suitable for a wide range of high-power switching applications in industrial, automotive, and power supply equipment
Application Areas
High-efficiency power conversion
Motor drives
Uninterruptible power supplies (UPS)
Welding equipment
Switch-mode power supplies
Product Lifecycle
This product is currently in active production and not nearing discontinuation
Replacement or upgrade options may be available from the manufacturer as technology progresses
Several Key Reasons to Choose This Product
Exceptional power density and efficiency due to low on-resistance and fast switching
Reliable and rugged design for demanding applications
Broad compatibility and suitability for a range of high-power switching needs
Backed by onsemi's reputation for quality and technological leadership in power semiconductors
