BUT11ATU - Fairchild Semiconductor

Manufacturer Part Number

BUT11ATU

Manufacturer

Fairchild (onsemi)

Introduction

The BUT11ATU is a high-voltage, high-power NPN bipolar junction transistor (BJT) from Fairchild Semiconductor, now part of onsemi.

Product Features and Performance

High voltage capability up to 450V collector-emitter breakdown voltage

High power handling up to 100W

High collector current up to 5A

Low collector-emitter saturation voltage of 1.5V @ 500mA, 2.5A

Through-hole TO-220-3 package

Product Advantages

Robust design for high voltage and high power applications

Excellent electrical performance characteristics

Reliable and durable construction

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 450V

Current Collector (Ic) (Max): 5A

Power Max: 100W

Operating Temperature: 150°C (TJ)

Quality and Safety Features

RoHS3 compliant

Suitable for high-reliability applications

Compatibility

Through-hole TO-220-3 package

Application Areas

High-voltage, high-power circuits

Power supplies

Motor controls

Industrial electronics

Product Lifecycle

The BUT11ATU is an active product and not nearing discontinuation.

Replacements and upgrades may be available from onsemi or other manufacturers.

Key Reasons to Choose This Product

Exceptional voltage and power handling capabilities

Robust and reliable performance

Widely compatible through-hole package

RoHS3 compliance for environmentally-friendly applications