Manufacturer Part Number
BUT11ATU
Manufacturer
onsemi
Introduction
The BUT11ATU is a high-voltage, high-power, NPN bipolar junction transistor (BJT) suitable for a wide range of applications, including power supplies, motor control, and industrial electronics.
Product Features and Performance
High voltage capability with a collector-emitter breakdown voltage of 450V
High power handling up to 100W
High collector current of up to 5A
Low collector-emitter saturation voltage of 1.5V at 500mA, 2.5A
Wide operating temperature range up to 150°C
Product Advantages
Robust and reliable performance
Excellent power handling capability
Suitable for high-voltage and high-current applications
Compact TO-220-3 package for efficient heat dissipation
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 450V
Current Collector (Ic) (Max): 5A
Power Max: 100W
Operating Temperature: 150°C (TJ)
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Through-hole mounting in TO-220-3 package
Application Areas
Power supplies
Motor control
Industrial electronics
Switched-mode power supplies
Inverters
Converters
Product Lifecycle
The BUT11ATU is an active product with no indication of discontinuation.
Replacement or upgraded products may be available in the future as technology advances.
Key Reasons to Choose This Product
High voltage and high power handling capability
Reliable and robust performance
Suitable for a wide range of high-power applications
Efficient heat dissipation in the compact TO-220-3 package
Compliance with RoHS3 standards for environmental responsibility